• DocumentCode
    3481735
  • Title

    PSpice model for hysteresis in pentacene field-effect transistors

  • Author

    Ucurum, C. ; Siemund, H. ; Goebel, H.

  • Author_Institution
    Dept. of Electron., Helmut Schmidt Univ., Hamburg
  • fYear
    2008
  • fDate
    17-20 Aug. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A PSpice model for hysteresis in pentacene field-effect transistors (FETs) is introduced. The model is based on the charge trap related threshold voltage shift in organic FETs (OFETs). The validity of the model is shown through the comparison of PSpice simulations with both static and transient measurements.
  • Keywords
    SPICE; hysteresis; organic field effect transistors; PSpice simulations; charge trap; hysteresis; organic FET; pentacene field-effect transistors; static measurements; threshold voltage shift; transient measurement; Atmospheric measurements; Circuit simulation; Current measurement; FETs; Hysteresis; OFETs; Pentacene; Performance evaluation; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Portable Information Devices, 2008 and the 2008 7th IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. PORTABLE-POLYTRONIC 2008. 2nd IEEE International Interdisciplinary Conference on
  • Conference_Location
    Garmish-Partenkirchen
  • Print_ISBN
    978-1-4244-2141-1
  • Electronic_ISBN
    978-1-4244-2142-8
  • Type

    conf

  • DOI
    10.1109/PORTABLE-POLYTRONIC.2008.4681301
  • Filename
    4681301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3481735