Title :
Microstructural features of nanocrystalline porous silicon
Author :
Teodorescu, V.S. ; Nistor, L.C. ; Blanchin, M.G. ; Ianeu, V. ; Draghici, M. ; Ciurea, M.L.
Author_Institution :
Nat. Inst. of Mater. Phys., Magurele, Romania
Abstract :
Microstructural features of nanocrystalline porous silicon films, obtained from both scanning and transmission electron microscopy, are presented. The films show a double scale porosity. The macroporosity forms an alveolar structure at a micrometric scale and the nanoporosity forms a silicon nanowires network in the bulk of the alveolar walls
Keywords :
elemental semiconductors; nanostructured materials; porosity; porous semiconductors; scanning electron microscopy; semiconductor thin films; silicon; transmission electron microscopy; Si; alveolar structure; double scale porosity; microstructural features; nanocrystalline porous Si films; nanoporosity; nanowires network; scanning electron microscopy; transmission electron microscopy; Clouds; Lattices; Microstructure; Milling; Morphology; Physics; Scanning electron microscopy; Semiconductor films; Silicon; Transmission electron microscopy;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810439
