DocumentCode
3481790
Title
The use of EM simulation in on-wafer microwave device de-embedding
Author
Gould, P.A. ; Davis, R.G.
Author_Institution
DERA, Malvern, UK
fYear
1997
fDate
35767
Firstpage
42401
Lastpage
42405
Abstract
This paper describes the use of EM simulation as a convenient method to provide an equivalent circuit model of the external parasitic pad structure of microwave devices. The extraction of accurate device models from measured data is an essential prerequisite of microwave circuit design. The first stage of the modelling process is to de-embed the intrinsic device response from the parasitic network associated with the on-wafer measurement environment. The normal approach is by means of open and short test structures to characterise the embedding network. In addition to requiring that special test structures be fabricated, this method has uncertainty associated with imperfect short and open terminating impedances and is sensitive to noise on the measurement data. In this work, it is shown how EM simulation of the embedding network can be used to deembed microwave HBT data. This approach is shown to give good agreement with the measured test piece approach thereby validating the simulation method
Keywords
microwave bipolar transistors; EM simulation; HBT; embedding network; equivalent circuit model; external parasitic pad structure; microwave circuit design; on-wafer measurement; on-wafer microwave device de-embedding; test structure;
fLanguage
English
Publisher
iet
Conference_Titel
Effective Microwave CAD (Ref. No: 1997/377), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19971269
Filename
662838
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