• DocumentCode
    348181
  • Title

    The nature of photoluminescence excitation bands in porous silicon

  • Author

    Torchinskaya, T.V. ; Korsunskaya, N.E. ; Sheinkman, M.K. ; Khomenkova, L.Yu. ; Bulakh, B.M. ; Dzhumaev, B.R. ; Many, A. ; Goldstein, Y. ; Savir, E.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    109
  • Abstract
    Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light absorption by some adsorbed species, while two ultraviolet ones are due to defects in silicon oxide
  • Keywords
    ageing; elemental semiconductors; photoluminescence; porous semiconductors; silicon; Si; aging; photoluminescence excitation spectra; porous silicon; ultraviolet band; visible band; Aging; Electromagnetic wave absorption; Infrared spectra; Photoluminescence; Physics; Potential well; Shape; Silicon; Wavelength measurement; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810441
  • Filename
    810441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348181