• DocumentCode
    348182
  • Title

    Contactless electroreflectance and piezoreflectance study of GaAs/GaAsP multiple quantum well structures

  • Author

    Gorea, O. ; Korotcov, A. ; Malikova, L. ; Pollak, F.H.

  • Author_Institution
    Dept. of Phys., State Univ. of Moldova, Chisinau, Moldova
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    113
  • Abstract
    GaAs/GaAs1-xPx multiple quantum wells structures have been studied by modulation spectroscopy technique. From a detailed lineshape fit to the contactless electroreflectance and piezoreflectance data we have determined the unstrained conduction band offset parameter for x=0.29
  • Keywords
    III-V semiconductors; conduction bands; electroreflectance; gallium arsenide; modulation spectra; piezoreflectance; semiconductor quantum wells; GaAs-GaAsP; GaAs/GaAsP multiple quantum well; conduction band offset parameter; contactless electroreflectance; lineshape; modulation spectroscopy; piezoreflectance; Buffer layers; Capacitive sensors; Educational institutions; Gallium arsenide; Nonhomogeneous media; Optical modulation; Photonic band gap; Physics; Quantum well devices; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810442
  • Filename
    810442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348182