A high performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region

Author

Cao, G. ; De Souza, M.M. ; Narayanan, E. M Sankara

Author_Institution

Emerging Technol. Res., Centr, De Montfort Univ., Leicester, UK

Volume

1

fYear

1999

fDate

1999

Firstpage

123

Abstract

The superior performance of a new 60-V class lateral power MOSFET using a graded doping profile in the drift region has been demonstrated for the first time. A simple technique to achieve the graded doping profile for a 3.5 micron drift length extends the breakdown voltage capability of existing power devices in thin SOI (SIMOX) technology. Our detailed analysis reveals that a significant improvement in the on-state and capacitance-voltage performance is possible in comparison to a conventional uniformly doped device

Keywords

SIMOX; doping profiles; power MOSFET; semiconductor device breakdown; 3.5 micron; 60 V; SIMOX; breakdown voltage capability; capacitance-voltage performance; drift region; graded doping profile; lateral power MOSFET; on-state performance; thin film SOI; uniformly doped device; Breakdown voltage; Capacitance-voltage characteristics; Doping profiles; Electronic mail; Lithography; MOSFET circuits; Medical simulation; Performance analysis; Power MOSFET; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810444

Filename

810444