DocumentCode :
348186
Title :
A simple method to evaluate the mobile charge effect on the transition capacitance of an asymmetrical PN junction
Author :
Mihaila, A.P. ; Rusu, A.
Author_Institution :
Fac. of Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
143
Abstract :
A simple method to evaluate the effect of the mobile carriers on the transition capacitance of the asymmetrical junctions at very low voltages is proposed. The method takes into account that the presence of both electrons and holes at the depletion region boundaries is equivalent with an ionic charge decrease. Quantitatively the method considers that this decrease amounts to a shrink of the depletion region width (w). With the new approach, the built-in voltage in the Schottky formula, should be replaced by: Vbi=2ΦF+(1.4+2.5)kT/q where ΦF is the Fermi potential of the low-doped side of the junction
Keywords :
capacitance; p-n junctions; Schottky formula; asymmetrical p-n junction; built-in voltage; depletion approximation model; mobile charge carrier effect; transition capacitance; Capacitance; Capacitors; Charge carrier density; Charge carrier processes; Dielectric constant; Electrons; Low voltage; Neodymium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
Type :
conf
DOI :
10.1109/SMICND.1999.810449
Filename :
810449
Link To Document :
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