Title :
Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes
Author :
Nallet, F. ; Planson, D. ; Isoird, K. ; Locatelli, M.L. ; Chante, J.P.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
This paper proposes a comparison between 1500 V Si bipolar diode and 1500 V 4H-SiC bipolar diode operations. The 1500 V blocking voltage is chosen because it corresponds to the highest rating for commercial silicon high voltage rectifiers. Electrical simulations (ISE program) are performed taking into account structure descriptions in agreement with the technology state of the art. The static and dynamic characteristics are given versus temperature for both materials. The impact of the higher thermal conductivity of SiC on the operating diode junction temperature is presented. These results are discussed in terms of application interests
Keywords :
high-temperature electronics; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor device models; silicon compounds; solid-state rectifiers; thermal conductivity; wide band gap semiconductors; 1500 V; 4H-SiC bipolar diode; ISE program; Si; Si bipolar diode; SiC; blocking voltage; dynamic characteristics; electrical simulations; high voltage rectifiers; operating diode junction temperature; reverse I-V characteristics; static characteristics; structure descriptions; switching behavior; thermal behavior; thermal conductivity; Bismuth; Circuit simulation; Photonic band gap; Rectifiers; Semiconductor diodes; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810461
