Phase and surface roughness evolution for as-deposited LPCVD silicon films

Within this paper we present a simultaneous investigation of the phase evolution (XRD studies) and surface roughness (AFM investigations) of as-deposited low pressure chemically vapor deposited (LPCVD) silicon films prepared by silane decomposition in a large range of deposition temperatures (500-615°C) and pressure (20-100 Pa). We show for the first time that a crystalline state of the LPCVD silicon layer (of ⟨211⟩ texture) can be obtained at temperatures as low as 500°C, while its evolution depends on deposition pressure. For a deposition temperature equal to 550°C an amorphous state is revealed independent of deposition pressure used and this was related to a minimum value of the surface roughness (below 1 nm)