Title :
A comparison between the complexant alkaline etching systems of silicon
Author :
Moldovan, Carmen ; Iosub, Rodica ; Dascalu, Dan ; Marin, Gheorghe ; Danila, Carmen
Author_Institution :
Nat. Inst. for R&D in Microtechnol., Bucharest, Romania
Abstract :
This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H2 O with complexant added. The complexant used is Azo calix[4]arene. The alkaline solutions are compared and analysed with and without complexant added from the point of view of hillocks, and the behaviour of the solutions is explained using the theory of molar conductivity. The results allow us to use the alkaline solutions and the organic complexant to monitor the etching process and to obtain a smooth silicon surface, almost free of hillocks
Keywords :
elemental semiconductors; etching; process monitoring; silicon; solutions; surface topography; Azo calix[4]arene; KOH; LiOH-H2O; NaOH; Si; alkaline solutions; complexant alkaline etching systems; etching process monitoring; hillock elimination; molar conductivity; organic complexant; smooth Si surface; wet anisotropic etching; Anisotropic magnetoresistance; Conductivity; Hydrodynamics; Monitoring; Research and development; Rough surfaces; Silicon; Surface roughness; Temperature dependence; Wet etching;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810463
