Metallic thin films by photodecomposition of new inorganic precursors: azide complexes

Author

Divan, Ralu ; Brezeanu, Maria ; Cemica, I. ; Olar, Rodica

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

213

Abstract

The deposition of films of metals, metal oxides and metal nitrides on surfaces has attracted a great interest due to their importance in the microelectronic industry. An alternative method, which totally avoids resist technology, is to use the photodecomposition of azide complex layers. We have initiated a study about photodecomposition of new compounds [Cr(N₃)L(H₂O)₂](NO₃)₂, [Ni(N₃)₂L₂].10H ₂O, [CuN₃L](NO₃) (L=triethanolamine) and [Cr(N₃)L´(H₂O)4](NO₃)₂, [Cu(N₃)L´(H₂O)₂](NO₃) (L´=diethanolamine). We have selected the best wavelengths for each complex after a detailed study of UV-spectra. We can obtain thin metallic films of Ni and Cu by photodecomposition of azide complexes

Keywords

copper; integrated circuit interconnections; liquid phase deposition; metallic thin films; nickel; photodissociation; spectrochemical analysis; Cr complexes; Cu; Cu complex; Cu films; Ni; Ni complex; Ni films; UV-spectra; azide complexes; diethanolamine; inorganic precursors; interconnects; metallic thin films; microelectronic industry; photodecomposition; triethanolamine; wavelength selection; Chemical vapor deposition; Chromium; Copper; Fabrication; Methanol; Nickel; Photochemistry; Resists; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810500

Filename

810500