Title :
Metallic thin films by photodecomposition of new inorganic precursors: azide complexes
Author :
Divan, Ralu ; Brezeanu, Maria ; Cemica, I. ; Olar, Rodica
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
The deposition of films of metals, metal oxides and metal nitrides on surfaces has attracted a great interest due to their importance in the microelectronic industry. An alternative method, which totally avoids resist technology, is to use the photodecomposition of azide complex layers. We have initiated a study about photodecomposition of new compounds [Cr(N3)L(H2O)2](NO3 )2, [Ni(N3)2L2].10H 2O, [CuN3L](NO3) (L=triethanolamine) and [Cr(N3)L´(H2O)4](NO3)2, [Cu(N3)L´(H2O)2](NO3) (L´=diethanolamine). We have selected the best wavelengths for each complex after a detailed study of UV-spectra. We can obtain thin metallic films of Ni and Cu by photodecomposition of azide complexes
Keywords :
copper; integrated circuit interconnections; liquid phase deposition; metallic thin films; nickel; photodissociation; spectrochemical analysis; Cr complexes; Cu; Cu complex; Cu films; Ni; Ni complex; Ni films; UV-spectra; azide complexes; diethanolamine; inorganic precursors; interconnects; metallic thin films; microelectronic industry; photodecomposition; triethanolamine; wavelength selection; Chemical vapor deposition; Chromium; Copper; Fabrication; Methanol; Nickel; Photochemistry; Resists; Silicon; Transistors;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810500
