Title :
Operational model for a n-silicon/N-diamond composite electron source
Author :
Filip, V. ; Nicolaescu, D. ; Okuyama, F. ; Kleps, I.
Author_Institution :
Dept. of Environ. Technol., Nagoya Inst. of Technol., Japan
Abstract :
A model for electron field injection from the n-silicon conduction band (CB) into the nitrogen (N)-diamond CB is presented. The model takes into account the electric field penetration into the silicon base and proposes a voltage dependence of the field in vacuum leading to a good fit of the experimental J-V results
Keywords :
diamond; electron field emission; electron sources; elemental semiconductors; nitrogen; silicon; Si-C:N; conduction band; electron field injection; field electron emission; model; n-silicon/N-diamond composite electron source; wide band gap material; Anodes; Conducting materials; Electron emission; Electron sources; Nitrogen; Semiconductor materials; Silicon; Thermal conductivity; Voltage; Wideband;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810507
