Title :
Temperature dependence of resonant second order susceptibility
Author :
Jin, Y. ; Liu, D.F. ; Wagoner, G.A. ; Zhang, X.-C. ; Bliss, D. ; Larkin, J. ; Alexander, M.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Previous research on terahertz optical rectification from zincblende semiconductors indicated that there was an enhancement of the resonant second-order nonlinear susceptibility near the bandgap in these materials. Because the bandgap of a semiconductor changes with temperature, it is important to study the resonant behavior of the second-order nonlinear susceptibility as a function of temperature near the bandgap. The authors report their recent studies of the temperature dependence of terahertz optical rectification from <111> oriented zincblende crystals (GaAs and InP) near their bandgap. The results showed that an enhancement of the resonant second-order nonlinear susceptibility occurred when the incident photon energy was slightly higher than the bandgap of the zincblende crystal at different temperatures
Keywords :
III-V semiconductors; 78 to 300 K; GaAs; InP; bandgap; incident photon energy; resonant behavior; resonant second order susceptibility; second-order nonlinear susceptibility; temperature dependence; terahertz optical rectification; zincblende semiconductors; Crystalline materials; Gallium arsenide; Indium phosphide; Nonlinear optics; Optical materials; Photonic band gap; Photonic crystals; Resonance; Semiconductor materials; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586328
