Temperature dependence of resonant second order susceptibility

Author

Jin, Y. ; Liu, D.F. ; Wagoner, G.A. ; Zhang, X.-C. ; Bliss, D. ; Larkin, J. ; Alexander, M.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

85

Abstract

Previous research on terahertz optical rectification from zincblende semiconductors indicated that there was an enhancement of the resonant second-order nonlinear susceptibility near the bandgap in these materials. Because the bandgap of a semiconductor changes with temperature, it is important to study the resonant behavior of the second-order nonlinear susceptibility as a function of temperature near the bandgap. The authors report their recent studies of the temperature dependence of terahertz optical rectification from <111> oriented zincblende crystals (GaAs and InP) near their bandgap. The results showed that an enhancement of the resonant second-order nonlinear susceptibility occurred when the incident photon energy was slightly higher than the bandgap of the zincblende crystal at different temperatures

Keywords

III-V semiconductors; 78 to 300 K; GaAs; InP; bandgap; incident photon energy; resonant behavior; resonant second order susceptibility; second-order nonlinear susceptibility; temperature dependence; terahertz optical rectification; zincblende semiconductors; Crystalline materials; Gallium arsenide; Indium phosphide; Nonlinear optics; Optical materials; Photonic band gap; Photonic crystals; Resonance; Semiconductor materials; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586328

Filename

586328