Title :
The modelling of the thermal field from a semiconductor structure using the finite elements method
Author :
Schiopu, Paul ; Degeratu, Vasile ; Lazar, G. ; Lakatos, Eugen ; Ivan, Stefania
Author_Institution :
Politehnica Univ. Bucharest, Romania
Abstract :
This work treats the evacuation of heat generated in discrete power semiconductor devices in steady state. Using an analytical model based on Galerkin´s method one can determine the thermal field configuration by means of finite elements which permit to obtain conclusions according with experimental results regarding the effect of junction depth and of contact surface and of the material (semiconductor) inhomogeneity upon the evacuation possibilities of heat
Keywords :
Galerkin method; finite element analysis; power semiconductor devices; semiconductor device models; Galerkin method; finite element model; heat generation; power semiconductor device; thermal field; Analytical models; Contacts; Electric resistance; Finite element methods; Heat transfer; Metallization; Surface resistance; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810511
