Carrier transport in laser-recrystallized polysilicon layers for microelectronic devices and sensors

Numerical simulation and experimental studies of the carrier transport in polycrystalline silicon-on-insulator layers (SOI) is an important stage in design of microelectronic devices based on this material. An aim of the work was to study the electrical resistivity of boron-doped polycrystalline silicon in a wide ranges of dopant densities and temperatures, including the case of external applied strain, and to reveal its change due to the laser treatment. A special attention was paid to the temperature behaviour of electrical and piezoresistive characteristics due to their importance for microelectronic circuits and, especially, sensors operating in wide temperature ranges