Title :
Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers
Author :
Korsunskaya, Nadezda ; Torchinskaya, Tatiana ; Kooshnirenko, Vladimir
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Abstract :
In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p++ layers of GaP:N p++-p+-n-n+ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new defects-NN2 complexes and isolated N atoms
Keywords :
III-V semiconductors; defect states; dislocations; excitons; gallium compounds; light emitting diodes; nitrogen; photoluminescence; semiconductor epitaxial layers; spectral line intensity; DA luminescence spectra; GaP epitaxial layers; GaP:N; defect complexes; dislocations; donor-acceptor luminescence spectra; excitonic bands; excitonic luminescence spectra; isolated N atoms; layer doping; light-emitting diodes; luminescence intensity; zero-phonon lines; Atomic layer deposition; Degradation; Doping; Epitaxial layers; Excitons; Impurities; Light emitting diodes; Luminescence; Physics; Zinc;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810538
