Influence of dislocations on excitonic and DA luminescence spectra in GaP epitaxial layers

Author

Korsunskaya, Nadezda ; Torchinskaya, Tatiana ; Kooshnirenko, Vladimir

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine

Volume

1

fYear

1999

fDate

1999

Firstpage

363

Abstract

In this paper the influence of dislocations on the excitonic and donor-acceptor (DA) luminescence spectra of p⁺⁺ layers of GaP:N p⁺⁺-p⁺-n-n⁺ light-emitting diodes and structures has been studied experimentally. The appearance of dislocations is shown to be associated with a high level of layer doping. The presence of dislocations brings about a decrease in the luminescence intensity of excitonic bands, a more considerable decline in the intensity of zero-phonon lines than in that of their photonic replicas, and also the appearance of a new defects-NN₂ complexes and isolated N atoms

Keywords

III-V semiconductors; defect states; dislocations; excitons; gallium compounds; light emitting diodes; nitrogen; photoluminescence; semiconductor epitaxial layers; spectral line intensity; DA luminescence spectra; GaP epitaxial layers; GaP:N; defect complexes; dislocations; donor-acceptor luminescence spectra; excitonic bands; excitonic luminescence spectra; isolated N atoms; layer doping; light-emitting diodes; luminescence intensity; zero-phonon lines; Atomic layer deposition; Degradation; Doping; Epitaxial layers; Excitons; Impurities; Light emitting diodes; Luminescence; Physics; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810538

Filename

810538