Title :
Interface effects of strained semiconductor heterostructure in longitudinal magnetic field
Author :
Kantser, V.G. ; Bejenari, I.M. ; Arapan, S.
Author_Institution :
Inst. of Appl. Phys., Kishinev, Moldova
Abstract :
In the present work it is shown that the strained semiconductor structure in the magnetic field is an interesting object with unusual properties. The electron spectrum and some physical properties of the considered system have been studied. As well as the spin splitting of the interface states leading to peculiar effects of spin polarization, the spectrum asymmetry on the wave vector ky, E(-ky)≠E(ky) is an important property of the considered system
Keywords :
electron spin polarisation; interface states; magnetic field effects; semiconductor heterojunctions; electron spectrum; interface effects; interface states; longitudinal magnetic field; physical properties; spectrum asymmetry; spin polarization; spin splitting; strained semiconductor heterostructure; wave vector; Capacitive sensors; Electrons; Lattices; Lead compounds; Magnetic field induced strain; Magnetic properties; Optical polarization; Photonic band gap; Physics; Piezoelectric polarization;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810539
