• DocumentCode
    348227
  • Title

    Interface effects of strained semiconductor heterostructure in longitudinal magnetic field

  • Author

    Kantser, V.G. ; Bejenari, I.M. ; Arapan, S.

  • Author_Institution
    Inst. of Appl. Phys., Kishinev, Moldova
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    367
  • Abstract
    In the present work it is shown that the strained semiconductor structure in the magnetic field is an interesting object with unusual properties. The electron spectrum and some physical properties of the considered system have been studied. As well as the spin splitting of the interface states leading to peculiar effects of spin polarization, the spectrum asymmetry on the wave vector ky, E(-ky)≠E(ky) is an important property of the considered system
  • Keywords
    electron spin polarisation; interface states; magnetic field effects; semiconductor heterojunctions; electron spectrum; interface effects; interface states; longitudinal magnetic field; physical properties; spectrum asymmetry; spin polarization; spin splitting; strained semiconductor heterostructure; wave vector; Capacitive sensors; Electrons; Lattices; Lead compounds; Magnetic field induced strain; Magnetic properties; Optical polarization; Photonic band gap; Physics; Piezoelectric polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810539
  • Filename
    810539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348227