Title :
Application of transfer matrix method for detailed description of phonon-polariton states in semiconductor superlattices
Author :
Gorea, Oleg ; Tatarinskaya, Olga
Author_Institution :
State Univ. of Moldova, Chisinau, Moldova
Abstract :
On the base of the transfer matrix formalism the dispersion of phonon polaritons in finite and infinite semiconductor SLs was calculated. The account of retardation effects leads to appearance of the additional “dynamical” bandgaps in the interface polariton spectra. The complex reflection coefficients also were calculated for the particular case of GaAs/GaAsP SLs. It is shown that the fine structure of spectra can be described by the method
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; interface phonons; interface states; phonon dispersion relations; polaritons; reflectivity; semiconductor superlattices; GaAs-GaAsP; GaAs/GaAsP; complex reflection coefficients; dispersion; dynamical bandgaps; fine structure; finite semiconductor SL; infinite semiconductor SL; interface polariton spectra; phonon-polariton states; retardation effects; semiconductor superlattices; transfer matrix method; Gallium arsenide; Integral equations; Laser sintering; Optical reflection; Optical surface waves; Phonons; Photonic band gap; Semiconductor lasers; Semiconductor superlattices; Surface emitting lasers;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810540
