Ellipsometric studies of indium tin oxide films deposited by sol-gel process

Author

Stoica, T.F. ; Gartner, M. ; Stoica, T.A. ; Zaharescu, M.

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

381

Abstract

Samples of indium tin oxide layers on silicon substrate have been performed by sol-gel procedure. In and Sn metallo-organic precursors have been used for successive deposition of ITO layers. Ellipsometric measurements and a fitting EMA procedure have been used in order to find the optical constants and composition of the ITO films. The void density depends on the solution type and the number of successive depositions. By the increase of the number of depositions, a decrease of the void density was observed. The refractive index decreases as a function of void density

Keywords

crystallites; ellipsometry; indium compounds; porosity; refractive index; semiconductor growth; semiconductor thin films; sol-gel processing; thickness measurement; tin compounds; ultraviolet spectra; visible spectra; voids (solid); ITO; ITO layers; InSnO; effective medium approximation; ellipsometric measurements; film composition; film thickness; optical constants; porosity; refractive index; silicon substrate; sol-gel process; spectroscopic ellipsometry; successive deposition; void density; Chemistry; Coatings; Conductive films; Conductivity; Crystallization; Indium tin oxide; Optical films; Physics; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810542

Filename

810542