Title :
Ellipsometric studies of indium tin oxide films deposited by sol-gel process
Author :
Stoica, T.F. ; Gartner, M. ; Stoica, T.A. ; Zaharescu, M.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Abstract :
Samples of indium tin oxide layers on silicon substrate have been performed by sol-gel procedure. In and Sn metallo-organic precursors have been used for successive deposition of ITO layers. Ellipsometric measurements and a fitting EMA procedure have been used in order to find the optical constants and composition of the ITO films. The void density depends on the solution type and the number of successive depositions. By the increase of the number of depositions, a decrease of the void density was observed. The refractive index decreases as a function of void density
Keywords :
crystallites; ellipsometry; indium compounds; porosity; refractive index; semiconductor growth; semiconductor thin films; sol-gel processing; thickness measurement; tin compounds; ultraviolet spectra; visible spectra; voids (solid); ITO; ITO layers; InSnO; effective medium approximation; ellipsometric measurements; film composition; film thickness; optical constants; porosity; refractive index; silicon substrate; sol-gel process; spectroscopic ellipsometry; successive deposition; void density; Chemistry; Coatings; Conductive films; Conductivity; Crystallization; Indium tin oxide; Optical films; Physics; Silicon; Substrates;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810542
