Title :
Effect of microwave radiation on the physicochemical properties of some semiconductor materials (GaAs, GaP, InP) and heterostructures, as well as on the parameters of surface-barrier diode structures
Author :
Belyaev, A.A. ; Belyaev, A.E. ; Ermolovich, I.B. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Soloviev, E.A. ; Statov, V.A. ; Svechnikov, S.V. ; Venger, E.F.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We have studied the effect of microwave (cm wavelength region) radiation on some semiconductor materials (GaAs, GaP, InP) and surface-barrier diode structures based on them. The changes in photoluminescence spectra of bulk semiconductor materials indicate at a modification of their impurity-defect composition. The changes in electrophysical parameters of the device structures studied seem to result from a structural-compositional modification of the interfaces due to microwave irradiation
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; binding energy; core levels; defect states; gallium arsenide; gallium compounds; indium compounds; photoluminescence; radiation effects; Auger depth profiles; C-V curves; GaAs; GaP; I-V curves; III-V semiconductor materials; InP; barrier height; bulk semiconductor materials; core electron binding energies; electrophysical parameters; free space mode; heterostructures; ideality factor; impurity-defect composition; interface modification; magnetron irradiation; microwave radiation effect; photoluminescence spectra; physicochemical properties; structural-compositional modification; surface-barrier diode structures; Chemicals; Conducting materials; Electromagnetic radiation; Gallium arsenide; Indium phosphide; Ionizing radiation; Microwave devices; Schottky diodes; Semiconductor diodes; Semiconductor materials;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810543
