Title :
Photovoltaic properties of the Bi4Ti3O12 /Si heterostructures
Author :
Pintilie, L. ; Pintilie, I. ; Alexe, M.
Author_Institution :
Nat. Inst. of Mater. Res., Bucharest-Magurele, Romania
Abstract :
Photovoltaic properties of the Bi4Ti3O12/Si heterostructures were investigated in the 250-1100 nm wavelength range. Four bands centered on 400 nm, 500 nm, 865 nm and 1025 nm are observed in the normalized spectral distributions. The relative amplitude of the peaks corresponding to these bands depends on the annealing temperature and ferroelectric polarization
Keywords :
MOS capacitors; annealing; bismuth compounds; dielectric polarisation; elemental semiconductors; ferroelectric capacitors; ferroelectric thin films; photodetectors; photovoltaic effects; silicon; 250 to 1100 nm; AC photovoltage; Bi4Ti3O12-Si; annealing temperature; band gap; chemical solution deposition; ferroelectric polarization; ferroelectric/semiconductor heterostructures; light sensors; normalized spectral distributions; perovskite films; photovoltaic properties; relative amplitude of peaks; Annealing; Bismuth; Ferroelectric films; Ferroelectric materials; Optical films; Optical modulation; Performance evaluation; Photovoltaic systems; Solar power generation; Sputtering;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810546
