The study of optical behaviour porous silicon (PSI) doped with Erbium (Er) by photoluminescence technique

Porous Silicon (PS) doped Erbium (Er) has been studied where Er on PSi is involved interaction of silicon and silicon dioxide. The Er doping process was carried out by immersion technique with electrolyte composed of Erbium (III) nitrate pentahydrate (Er₃NO₃OH₅) and Ethanol. The photoluminescence (PL) effect on PSi samples have been studied and shows a PL intensity is improves at certain mass percentage of Erbium (Er) and the PL peak shifts to the blue luminescence. The result shows that when the Erbium diffuses into a pore, an enhancement of the photoluminescence was obtained for all Erbium used concentration. The photoluminescence of porous silicon (PS) was increased at about 12%. It was also found that the photoluminescence became stable at certain point after the dopant solution continually to increase. All samples show a broad nanocrystal-related luminescence spectrum centered around 700 nm to 725 nm. So it concluded that the porous silicon doped with erbium is able to increase the photoluminescence intensity.