DocumentCode
3482524
Title
Growth mechanism of Cu-Sn full IMC joints on polycrystalline and single crystal Cu substrate
Author
Rui Zhang ; Yanhong Tian ; Baolei Liu ; Chunjin Hang
Author_Institution
State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
1276
Lastpage
1279
Abstract
Growth mechanisms of Cu-Sn IMC joints bonded at 300°C on polycrystalline and single crystal Cu substrates were investigated by Scanning Electron Microscopy (SEM) and Electron Backscatter Diffraction (EBSD) technology. The results showed that the prism-type Cu6Sn5 grains formed on single crystal Cu substrate in the initial stage grew into the scallop-type Cu6Sn5 grains by grain rotation and merge mechanism with the proceeding of the bonding. In addition, the scallop-type Cu6Sn5 grains didn´t have preferred orientation. The columnar Cu3Sn grains grew in clusters at the expense of Cu6Sn5 along direction of the adjacent Cu6Sn5 grains grain boundaries. The orientation of Cu3Sn was unrelated to that of Cu or Cu6Sn5, but had preferred orientations of Cu3Sn (100) parallel to the Cu substrate.
Keywords
copper alloys; crystal growth; crystal orientation; electron backscattering; grain boundaries; scanning electron microscopy; tin alloys; Cu-Sn full IMC joint; Cu3Sn; Cu6Sn5; EBSD technology; SEM; columnar Cu3Sn grains; crystal growth mechanism; electron backscatter diffraction technology; grain boundaries; grain rotation; merge mechanism; polycrystalline; prism-type Cu6Sn5 grains; scallop-type Cu6Sn5 grains; scanning electron microscopy; single crystal copper substrate; temperature 300 C; Bonding; Grain boundaries; Joints; Substrates; Three-dimensional displays; Tin; Cu single crystal; EBSD; Growth mechanisms; Intermetallic compound joint; Orientation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756690
Filename
6756690
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