Title :
Three-dimensional photonic crystals and their applications
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We report our new approach to develop the complete three-dimensional photonic crystal and the future prospects. Our photonic crystal is constructed with GaAs (or InP) stripes stacked by a wafer-fusion technique to form an asymmetric face-centered cubic (A-FCC) structure. The stacked four layers correspond to the one-period of the A-FCC structure. The band structure has a complete photonic band gap for all wave vectors. Moreover, since the crystal is constructed with a III-V semiconductor, which is widely utilized for optoelectronic devices, by the wafer-bonding technique it is possible to introduce arbitrary defect states and light-emitters and to form an electronically active interface. Thus, once the 3D photonic crystal is realized, it will open a door for various applications including an active quantum device such as zero-threshold laser.
Keywords :
III-V semiconductors; defect states; gallium arsenide; indium compounds; photonic band gap; wafer bonding; GaAs; GaAs stripes; III-V semiconductor; InP; InP stripes; active quantum device; asymmetric face-centered cubic structure; band structure; defect states; electronically active interface; light-emitters; one-period; optoelectronic devices; photonic band gap; stacked four layers; three-dimensional photonic crystals; wafer-bonding technique; wafer-fusion technique; wave vectors; zero-threshold laser; Attenuation; Indium phosphide; Integrated optics; Optical arrays; Optical attenuators; Optical devices; Optical modulation; Optical waveguides; Photonic band gap; Photonic crystals;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811366
