• DocumentCode
    3482884
  • Title

    Compact broad beam ion implantation of 25 keV N+ in silicon

  • Author

    Schlemm, Hermann

  • Author_Institution
    Inst. fur Festkorperphys., Friedrich-Schiller-Univ., Jena, Germany
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    400
  • Lastpage
    403
  • Abstract
    A very compact arrangement consisting of a broad beam ion source (Kaufman-ion-source) followed by a radio-frequency bandpass mass separator was used to generate a mass separated broad ion beam with an ion energy of 500 eV. After this, a second ion acceleration to 4, 8 or 16 keV takes place at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. As an example N+-implantation into silicon was carried out in the dose range from 1013 to 1016 cm-2. An analysis by Rutherford-Backscattering and Thermal Waves shows the implanted dose and the damage depth profile
  • Keywords
    Rutherford backscattering; doping profiles; elemental semiconductors; ion implantation; ion sources; nitrogen; photothermal effects; silicon; 25 keV; 4 to 16 keV; 500 eV; Kaufman-ion-source; Rutherford-backscattering analysis; Si:N; Si:N+; broad beam ion source; compact broad beam ion implantation; damage depth profile; implanted dose; ion beam diameter broadening; ion energy; mass separated broad ion beam; radio-frequency bandpass mass separator; second ion acceleration; thermal wave analysis; Current density; Doping; Electron beams; Filters; Gases; Ion beams; Ion implantation; Ion sources; Nitrogen; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586371
  • Filename
    586371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3482884