• DocumentCode
    3483119
  • Title

    Effects of mixing low-Z gases on a 2.45-GHz multiply charged ion source

  • Author

    Kato, Yushi ; Saitoh, Mitsuru ; Kubo, Yoshiyuki ; Ishii, Shigeyuki

  • Author_Institution
    Dept. of Electron. & Inf., Toyama Univ., Japan
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    418
  • Lastpage
    421
  • Abstract
    Fundamental phenomena in mixing low-Z gases into the operating gas have been experimentally studied in an electron cyclotron resonance (ECR) multicharged ion source (2.45 GHz). The ECR plasma is confined in the mirror held superimposed by the octupole magnetic field. An ECR zone is formed near the bottom of the mirror trap. The main operating gas is argon. Hydrogen, helium, nitrogen, and oxygen gases are chosen as admixtures. The multicharged ions pass through the extractor at the mirror end, and the charge state distributions are investigated at various pressures and mixing ratios. The gas-mixing effect enhances production efficiency of high-charge state ions (Ar6+-9+); in particular their currents substantially increase in the case of oxygen mixing. There exists an optimum mixing ratio and total pressure for each admixture. The electron temperature and density are measured by a Langmuir probe. The cause of enhanced production by admixing low-Z gases is discussed by taking account of plasma parameters including plasma potentials and ion temperatures estimated from elaborate measurement of the ion beam
  • Keywords
    gas mixtures; ion sources; magnetic mirrors; plasma devices; 2.45 GHz; Ar; ECR plasma; H2; He; Langmuir probe; N2; O2; charge state distribution; electron density; electron temperature; ion beam measurement; ion temperature; low-Z gas mixing; mirror trap; multiply charged ion source; octupole magnetic field; plasma potential; production efficiency; Argon; Cyclotrons; Electrons; Gases; Mirrors; Plasma confinement; Plasma density; Plasma measurements; Plasma temperature; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586382
  • Filename
    586382