Title :
Gate Material Engineered-Trapizoidal Recessed Channel MOSFET (GME-TRC) for Ultra Large Scale Integration (ULSI)
Author :
Malik, Priyanka ; Kumar, Sona P. ; Chaujar, Rishu ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, Delhi
Abstract :
In this work, the proposed GME-TRC MOSFET structure has been investigated for different negative junction depths (NJD) and different gate metal workfunction difference and its performance improvement over the TRC MOSFET is studied using ATLAS-3D and DEVEDIT-3D. The result clearly depicts that GME-TRC MOSFET exhibits superior performance as compared to TRC MOSFET in terms of threshold voltage roll-off, reduced punchthrough and DIBL; and improved switching speed of the device and current driving capabilities. Thus, the investigated device structure, in addition to providing SCEs suppression and hot carrier effect immunity, enhances the device reliability and performance in terms of the factors discussed earlier.
Keywords :
MOSFET; ULSI; integrated circuit reliability; ULSI; device reliability; gate material engineered-trapezoidal recessed channel MOSFET; negative junction depths; threshold voltage roll-off; ultra large scale integration; Degradation; Electronic mail; Hot carrier effects; Laboratories; MOSFET circuits; Semiconductor devices; Semiconductor materials; Threshold voltage; Transconductance; Ultra large scale integration;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958124
