• DocumentCode
    3483200
  • Title

    Plasma flood system for the Precision Implant 9200

  • Author

    Vella, M.C. ; Aoki, N. ; Ito, H. ; Asechi, H. ; Hacker, P. ; Couchot, R. ; Nishio, S. ; Reilly, M. ; Sugiyama, N. ; Yamanishi, M.

  • Author_Institution
    Electro-Graph Inc., Carlsbad, CA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    428
  • Lastpage
    431
  • Abstract
    A compact Plasma Flood System (pfs) has been developed for Applied Materials Precision Implant 9000/9200. Operating in the accel/decel mode with 12 mA, 40 keV As+ and 10 mA of BF2+ at 30 keV, the pfs demonstrated 100% yield with 106 antenna MOS capacitors over 6.5 and 10 nm gate oxides. With 0 V guide tube bias, emission current is about 240 mA at 4 A arc. The pfs is easily serviceable, with demonstrated filament life in excess of four weeks
  • Keywords
    MOS capacitors; ion implantation; ion sources; 10 mA; 12 mA; 240 mA; 30 keV; 40 keV; Applied Materials Precision Implant 9200; As; BF2; accel/decel mode; antenna MOS capacitor; emission current; filament life; gate oxide; plasma flood system; yield; Electrons; Floods; Implants; Particle beams; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma sources; Surface charging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586386
  • Filename
    586386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3483200