Critical issues of localization in the development of InGaN/GaN laser diodes

Author

Bidnyk, S. ; Yong-Hoon Cho ; Schmidt, C.T.J. ; Gainer, A.G.H. ; Song, A.J.J. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P. ; Jhe, W.

Author_Institution

Dept. of Phys., Oklahoma State Univ., Stillwater, OK, USA

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

286

Abstract

We have systematically studied both the spontaneous and stimulated emission (SE) properties of InGaN-based lasing mediums using a variety of linear and nonlinear optical techniques. Through this detailed study we present strong evidence that emission characteristics of near-UV-blue laser diodes are strongly dependent on localized carrier recombination, believed to be due to inhomogeneous potential fluctuations. We observed a large Stokes shift of photoluminescence (PL) with respect to absorption edge obtained from PL excitation spectra, a large blueshift of spontaneous emission with increasing excitation density, and a redshift in emission energy with time in time-resolved PL spectra.

Keywords

III-V semiconductors; gallium compounds; indium compounds; photoluminescence; quantum well lasers; red shift; spontaneous emission; stimulated emission; InGaN; InGaN-GaN; InGaN-based lasing mediums; InGaN/GaN laser diode localisation; PL excitation spectra; absorption edge; emission characteristics; emission energy; increasing excitation density; inhomogeneous potential fluctuations; large Stokes shift; large spontaneous emission blueshift; linear optical techniques; localized carrier recombination; near-UV-blue laser diodes; nonlinear optical techniques; photoluminescence; redshift; spontaneous emission; stimulated emission; time-resolved PL spectra; Diode lasers; Fluctuations; Gallium nitride; Laser excitation; Nonlinear optics; Optical films; Optical pumping; Quantum well devices; Radiative recombination; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811416

Filename

811416