Title :
The beam performance of the Genus Tandetron 1520 MeV implanter
Author :
Tokoro, Nobuhiro ; Sakase, Takao ; Bowen, Chuck M. ; Maciejowski, Peter E. ; O´Connor, J.P.
Author_Institution :
Ion Technol. Div., Genus Inc., Newburyport, MA, USA
Abstract :
The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter “Tandetron 1520” with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters. This paper describes the basic beam line design as well as the actual beam performance of boron and phosphorus for the system
Keywords :
ion implantation; 1520 MeV; B; Genus Tandetron 1520; P; beam line design; high energy ion implanter; mass semiconductor production line; system foot print; Acceleration; Boron; Current measurement; Energy measurement; Irrigation; Lenses; Particle beam injection; Particle beams; Pollution measurement; Voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586393
