DocumentCode
3483375
Title
The beam performance of the Genus Tandetron 1520 MeV implanter
Author
Tokoro, Nobuhiro ; Sakase, Takao ; Bowen, Chuck M. ; Maciejowski, Peter E. ; O´Connor, J.P.
Author_Institution
Ion Technol. Div., Genus Inc., Newburyport, MA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
443
Lastpage
446
Abstract
The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter “Tandetron 1520” with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters. This paper describes the basic beam line design as well as the actual beam performance of boron and phosphorus for the system
Keywords
ion implantation; 1520 MeV; B; Genus Tandetron 1520; P; beam line design; high energy ion implanter; mass semiconductor production line; system foot print; Acceleration; Boron; Current measurement; Energy measurement; Irrigation; Lenses; Particle beam injection; Particle beams; Pollution measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586393
Filename
586393
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