• DocumentCode
    3483411
  • Title

    The VIISion 80 and VIISion 200 ion implanter beam lines

  • Author

    Renau, A. ; Smatlak, D. ; Angel, G.C. ; Mack, M.E. ; Evans, E.

  • Author_Institution
    Varian Ion Implant Syst., Gloucester, MA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    450
  • Lastpage
    453
  • Abstract
    The beam line design for Varian´s VIISion high current ion implanters incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer. This paper describes the architecture of both the 80 keV and 200 keV beam lines. Some of the novel beam line modules are discussed along with the performance of these systems
  • Keywords
    beam handling equipment; ion implantation; 200 keV; 80 keV; VIISion 200; VIISion 80; Varian; beam line design; constant current extraction system; dual filament ion source; faraday; high current ion implanter; ion beam generation; ion beam transport; mass analysis system; rotating mass defining slit; variable gap acceleration system; Apertures; Electrodes; Geometry; Implants; Ion beams; Ion sources; Magnetic analysis; Magnetic fields; Particle beams; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586395
  • Filename
    586395