Title :
The VIISion 80 and VIISion 200: high current ion implantation systems for greater throughput with excellent performance at low to high doses
Author :
Lundquist, Paul ; Pedersen, Bjorn ; Ackerman, David ; Brown, Douglas
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
Abstract :
The 80 keV and 200 keV VIISion ion implantation systems autotune and implant high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. These implanters deliver a repeatable uniformly implanted dose, with low particle counts, over a range from low to high doses
Keywords :
ion implantation; 200 keV; 80 keV; VIISion 200; VIISion 80; autotuning; dose uniformity; drift mode; high current ion implantation; ion optics; particle count; plasma flood gun; throughput; wafer charging; Acceleration; Contamination; Floods; Implants; Ion implantation; Ion sources; Plasma immersion ion implantation; Semiconductor device modeling; Throughput; Voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586401
