• DocumentCode
    3483637
  • Title

    The use of a high current implanter for 5E10-E12 dose range implants

  • Author

    Clarke, N.L.H. ; Wauk, M.T. ; de Cock, G. ; Lee, R.M. ; Castle, M.D.S.

  • Author_Institution
    Implant Div., Appl. Mater., Horsham, UK
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    494
  • Lastpage
    497
  • Abstract
    The Applied Materials P19500 xR implanter has been designed to cover the three main areas of implanter operation; low dose, high dose and high energies up to 750 keV, thereby reducing the number of implant tools required in a production environment. In this paper, low dose data from the extended dose range of the P19500 xR implanter is presented. Doses down to the 5E10 cm-2 level have been investigated using ThermawaveTM measurements and implant uniformity and repeatability better than 0.4% have been obtained. An effect due to the wafer surface condition prior to implant has been observed from the thermawave maps. Dose sensitivity data from this and other implants is also reported
  • Keywords
    ion implantation; photothermal effects; 750 keV; Applied Materials P19500xR; dose repeatability; dose sensitivity; high current implanter; thermawave mapping; wafer processing; Calibration; Costs; Foundries; Implants; Modems; Production; Road transportation; Semiconductor device modeling; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586408
  • Filename
    586408