DocumentCode :
3483721
Title :
THz generation due to charge oscillations in quantum wells
Author :
Chuang, S.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume :
2
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. A few mechanisms have been identified for the terahertz generation from bulk and quantum-well semiconductors using an intense femtosecond optical pulse. These mechanisms include: carrier transport, bulk optical rectification, and field induced optical rectification effects. In this talk, the above mechanisms will be discussed with emphasis on the charge oscillations in quantum well structures
Keywords :
microwave generation; THz generation; bulk optical rectification; carrier transport; charge oscillations; field induced optical rectification effects; intense femtosecond optical pulse; quantum well structures; quantum wells; quantum-well semiconductors; terahertz generation; Charge carrier processes; Current measurement; Electron optics; Excitons; Nonlinear optics; Optical pulse generation; Optical pulses; Optical superlattices; Quantum wells; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586414
Filename :
586414
Link To Document :
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