The base resistance controlled thyristor (BRT)-a new MOS gated power thyristor

Author

Nandakumar, M. ; Baliga, B.J. ; Shekar, M.S. ; Tandon, S. ; Reisman, A.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1991

fDate

22-24 Apr 1991

Firstpage

138

Lastpage

141

Abstract

A novel MOS gated thyristor structure called the base resistance controlled thyristor is proposed. In this device structure, turn off of a thyristor built with a N drift region is achieved by diverting hole current from its p-base to an adjacent p⁺ region through a p-channel MOSFET. This has the effect of reducing the p-base resistance and raising the holding current of the thyristor above the operating current level. The device concept has been verified by two-dimensional numerical simulations. Experimental results on 600 V devices fabricated with an IGBT process corroborate theoretical predictions

Keywords

equivalent circuits; semiconductor device models; thyristors; 600 V; IGBT process; MOS gated power thyristor; base resistance controlled thyristor; holding current; p-base resistance; p-channel MOSFET; two-dimensional numerical simulations; Anodes; Cathodes; Electric resistance; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Numerical simulation; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146084

Filename

146084