Title :
The base resistance controlled thyristor (BRT)-a new MOS gated power thyristor
Author :
Nandakumar, M. ; Baliga, B.J. ; Shekar, M.S. ; Tandon, S. ; Reisman, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A novel MOS gated thyristor structure called the base resistance controlled thyristor is proposed. In this device structure, turn off of a thyristor built with a N drift region is achieved by diverting hole current from its p-base to an adjacent p+ region through a p-channel MOSFET. This has the effect of reducing the p-base resistance and raising the holding current of the thyristor above the operating current level. The device concept has been verified by two-dimensional numerical simulations. Experimental results on 600 V devices fabricated with an IGBT process corroborate theoretical predictions
Keywords :
equivalent circuits; semiconductor device models; thyristors; 600 V; IGBT process; MOS gated power thyristor; base resistance controlled thyristor; holding current; p-base resistance; p-channel MOSFET; two-dimensional numerical simulations; Anodes; Cathodes; Electric resistance; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; Numerical simulation; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146084
