Low energy, low dose performance of a high energy implanter

The ion implant dose requirements of a modern semiconductor manufacturing product flow span a range of approximately 1E16 cm^-2 to 1E16 cm^-2. High energy ion implant equipment is typically operated in applications that require energies greater than 500 KeV and up to several MeV. The low dose, low energy capability of a high energy ion implanter is demonstrated for energies less than 100 KeV, doses less than 1E12 cm^-2 and beam currents less than 10 μA. The performance is studied using various metrology tools and verified using device data from a CMOS integrated circuit manufacturing process