Title :
Low energy, low dose performance of a high energy implanter
Author :
Dyer, David E. ; Angelo, David A St
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
The ion implant dose requirements of a modern semiconductor manufacturing product flow span a range of approximately 1E16 cm-2 to 1E16 cm-2. High energy ion implant equipment is typically operated in applications that require energies greater than 500 KeV and up to several MeV. The low dose, low energy capability of a high energy ion implanter is demonstrated for energies less than 100 KeV, doses less than 1E12 cm-2 and beam currents less than 10 μA. The performance is studied using various metrology tools and verified using device data from a CMOS integrated circuit manufacturing process
Keywords :
CMOS integrated circuits; integrated circuit technology; ion implantation; 10 muA; 100 keV; CMOS integrated circuit; high energy implanter; low energy low dose ion implantation; metrology; semiconductor manufacturing; Dosimetry; Helium; Implants; Metrology; Optical pumping; Optical sensors; Production; Silicon; Testing; Threshold voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586426
