THz radiation from a [111] InAs wafer using 1.55 /spl mu/m femtosecond laser pulses

Author

Kondo, T. ; Sakamoto, M. ; Tonouchi, M. ; Hangyo, M.

Author_Institution

Res. Center for Supercond. Mater. & Electron., Osaka Univ., Japan

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

449

Abstract

Terahertz (THz) radiation from a variety of materials excited with a femtosecond laser has been extensively studied. However, the THz radiation excited by the femtosecond laser pulses with a wavelength of around 1.5 /spl mu/m was reported only by Howells et al. (1995) using an InSb wafer. Since the wavelength of 1.55 /spl mu/m is widely used in the optical fiber communication field, the THz radiation with the 1.55 /spl mu/m laser is of a technological importance to realize photonic microwave applications. In the work, we report the THz radiation from a (lll) InAs wafer using 1.55 /spl mu/m femtosecond laser pulses.

Keywords

III-V semiconductors; indium compounds; laser beam effects; microwave measurement; microwave photonics; optical pumping; submillimetre wave generation; 1.55 mum; InAs; InAs wafer; InSb wafer; THz radiation; femtosecond laser; femtosecond laser pulses; optical fiber communication field; photonic microwave applications; technological importance; wavelength; Azimuthal angle; Dipole antennas; Lenses; Nonlinear optics; Optical mixing; Optical pulses; Optical surface waves; Radiation detectors; Surges; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811514

Filename

811514