10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

Author

Otsuji, Taiichi ; Kato, Kazuhiko ; Nagatsuma, Tridao ; Yoneyama, Mikio

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

203

Abstract

This paper addresses a pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 2OO-mVpp saturation output, and a near 100-GHz bandwidth. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated

Keywords

high-speed optical techniques; 10 to 72 Gbit/s; 100 GHz; electrical control; electrooptic sampling; on-wafer large-signal characterization; optical-to-electrical conversion stimulus probe head; optoelectronic random pulse generator; pulse patterns; pulse-rate tuning; return-to-zero mode; ultrahigh-speed electronic devices; ultrawide band amplifier; Bandwidth; Earth Observing System; Optical amplifiers; Optical control; Optical pulse generation; Optical saturation; Probes; Pulse generation; Sampling methods; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586433

Filename

586433