DocumentCode :
3484259
Title :
The structure and optoelectronic properties of a new class of semiconductor materials: crystalline organic multiple quantum well structures grown by organic molecular beam deposition
Author :
Burrows, P.E. ; Forrest, S.R. ; Haskal, E. ; Hirose, U. ; Fenter, P. ; Eisenberger, P.
Author_Institution :
Princeton Univ., NJ, USA
Volume :
2
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. We discuss recent advances in demonstrating a new type of ordered growth-quasi-epitaxy-of organic molecular films using the UHV process of organic molecular beam deposition. The understanding of film structure, and the rationale for growth in these useful structures for optoelectronics will be discussed
Keywords :
semiconductor quantum wells; UHV process; crystalline organic multiple quantum wells; molecular beam deposition; molecular films; optoelectronic properties; ordered growth; quasi-epitaxy; semiconductor materials; structure; Crystalline materials; Crystallization; Molecular beam epitaxial growth; Organic materials; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586445
Filename :
586445
Link To Document :
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