DocumentCode
3484259
Title
The structure and optoelectronic properties of a new class of semiconductor materials: crystalline organic multiple quantum well structures grown by organic molecular beam deposition
Author
Burrows, P.E. ; Forrest, S.R. ; Haskal, E. ; Hirose, U. ; Fenter, P. ; Eisenberger, P.
Author_Institution
Princeton Univ., NJ, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Abstract
Summary form only given. We discuss recent advances in demonstrating a new type of ordered growth-quasi-epitaxy-of organic molecular films using the UHV process of organic molecular beam deposition. The understanding of film structure, and the rationale for growth in these useful structures for optoelectronics will be discussed
Keywords
semiconductor quantum wells; UHV process; crystalline organic multiple quantum wells; molecular beam deposition; molecular films; optoelectronic properties; ordered growth; quasi-epitaxy; semiconductor materials; structure; Crystalline materials; Crystallization; Molecular beam epitaxial growth; Organic materials; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586445
Filename
586445
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