Title :
Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes
Author :
Moneger, S. ; Pollak, Fred H. ; Mathine, D.L. ; Droopad, R. ; Maracas, G.N.
Author_Institution :
Dept. of Phys., Brooklyn Coll., NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Electroreflectance (contactless and with contacts) has been used to characterize an InGaAs vertical-cavity surface-emitting laser at 300 K. The 1020 nm lasing spectrum correlates very well with the energy of the lowest lying electroreflectance feature
Keywords :
indium compounds; 1020 nm; 300 K; GaAs-GaAlAs; GaAs/GaAlAs resonant cavity; InGaAs; VCSEL; contact modes; contactless modes; electroreflectance characterization; lasing spectrum; three InGaAs quantum wells; Electrodes; Gallium arsenide; Indium gallium arsenide; Optical arrays; Optical materials; Resonance; Silicon; Surface emitting lasers; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586450
