GEWE-RC MOSFET: High performance RF solution to CMOS technology

The work thus presents GEWE-RC MOSFET as a potential candidate for high performance RF applications and achieves fi of 48.6 GHz which is a 31.7 % and 48.5 % improvement as compared to the RC and bulk respectively, at Vgs = 1.0 V, for same set of design parameters, owing to the improved gate controllability and reduced parasitic capacitances. Moreover,intrinsic delay and high gains pertained by GEWE-RC MOSFET proves its efficacy for wireless communication and RF applications. Excellent HF characteristics of small geometry GEWE-RC silicon MOSFET´s with low-power supply voltage are demonstrated.