DMG AlGaN/GaN HEMT: A solution to RF and wireless applications for reduced distortion performance

The study thus proves that DMG AlGaN/GaN HEMT is a potential candidate for growing requirement of high linearity and low distortion in the telecommunication industry due to reduced SCEs and a more uniform electric field distribution. The study also shows that the linearity performance improves further on using lower doping and thickness of the barrier layer and increased metal gate workfunction difference; thus presenting DMG AlGaN/GaN HEMT as a promising solution for high performance RF applications.