Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation

Author

Tsuno, H. ; Anzai, K. ; Matsumura, M. ; Minami, S. ; Honjo, A. ; Koike, H. ; Hiura, Y. ; Takeo, A. ; Fu, W. ; Fukuzaki, Y. ; Kanno, V.M. ; Ansai, H. ; Nagashima, N.

Author_Institution

Sony Corp., Atsugi

fYear

2007

fDate

12-14 June 2007

Firstpage

204

Lastpage

205

Abstract

We report an advanced method of analyzing and modeling MOSFET characteristic fluctuations in CMOS circuits. We focused on gate space dependence, STI width dependence, and interaction between gate-STI distance and STI width in 65-nm node technology with a 40-nm-gate length. These dependences haven´t been treated by the conventional BSIM and other models. Gate space dependence is well modeled by treating mechanical stress and TED as separate causes of fluctuation. By bringing these dependences newly to the BSIM model in adequate form, advanced CMOS circuit performances must be estimated more accurately.

Keywords

CMOS integrated circuits; MOSFET; CMOS circuits; MOSFET characteristic fluctuation; TED; gate space dependence; layout variation; mechanical stress; CMOS technology; Capacitive sensors; Electric potential; Extraterrestrial measurements; Fluctuations; Length measurement; MOSFET circuits; Semiconductor device modeling; Space technology; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339693

Filename

4339693