Title :
Modeling of the transient ionizing radiation response of an inductively-loaded power MOSFET
Author :
Keshavarz, Abdol A. ; Franz, Gerhard A. ; Hawkins, Charles F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The authors present a two-dimensional computer simulation of the radiation response of a power MOSFET device that uses the effect of the external load circuit in calculations. It makes it possible to observe the effects of the device structure, external circuitry, and biasing voltage on the transient radiation response of the device. The method is used to find important parameters such as the maximum induced current in the device or the maximum power dissipation under ionizing radiation. Based on the results, it can be decided if the device will be operating within its safety operating region when irradiated by a specific radiation pulse. The simulation can replace expensive and time-consuming laboratory testing with short-duration pulses
Keywords :
digital simulation; insulated gate field effect transistors; power transistors; semiconductor device models; biasing voltage; device structure; external circuitry; external load circuit; inductively-loaded power MOSFET; maximum induced current; maximum power dissipation; safety operating region; transient ionizing radiation response; two-dimensional computer simulation; Computer simulation; Ionizing radiation; Laboratories; MOSFET circuits; Power MOSFET; Power dissipation; Radiation safety; Safety devices; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146088
