• DocumentCode
    3484827
  • Title

    A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability

  • Author

    Ho, ChiaHua ; Lai, E.K. ; Lee, M.D. ; Pan, C.L. ; Yao, Y.D. ; Hsieh, K.Y. ; Liu, Rich ; Lu, C.Y.

  • Author_Institution
    Maxcronix Int. Co. Ltd., Hsinchu
  • fYear
    2007
  • fDate
    12-14 June 2007
  • Firstpage
    228
  • Lastpage
    229
  • Abstract
    WOx formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics (ChiaHua Ho et al., 2007). The simple memory is completely self-aligned, requiring no additional masks and has a small 6F2 cell size. In this work we introduce a graded oxide device that is highly reliable (250degC baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
  • Keywords
    oxidation; plasma chemistry; random-access storage; tungsten compounds; conduction mechanisms; memory reliability; plasmas oxidation; self-aligned graded oxide resistance memory; Electrons; Metal-insulator structures; Plugs; Reliability engineering; Switches; Tellurium; Temperature; Thermal stability; Tin; Voltage; RRAM; WOx; reliability; self-aligned;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-03-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2007.4339703
  • Filename
    4339703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3484827