DocumentCode :
3484827
Title :
A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability
Author :
Ho, ChiaHua ; Lai, E.K. ; Lee, M.D. ; Pan, C.L. ; Yao, Y.D. ; Hsieh, K.Y. ; Liu, Rich ; Lu, C.Y.
Author_Institution :
Maxcronix Int. Co. Ltd., Hsinchu
fYear :
2007
fDate :
12-14 June 2007
Firstpage :
228
Lastpage :
229
Abstract :
WOx formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics (ChiaHua Ho et al., 2007). The simple memory is completely self-aligned, requiring no additional masks and has a small 6F2 cell size. In this work we introduce a graded oxide device that is highly reliable (250degC baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
Keywords :
oxidation; plasma chemistry; random-access storage; tungsten compounds; conduction mechanisms; memory reliability; plasmas oxidation; self-aligned graded oxide resistance memory; Electrons; Metal-insulator structures; Plugs; Reliability engineering; Switches; Tellurium; Temperature; Thermal stability; Tin; Voltage; RRAM; WOx; reliability; self-aligned;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
Type :
conf
DOI :
10.1109/VLSIT.2007.4339703
Filename :
4339703
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3484827
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