Title :
TiN growth on Si[100] by hybrid pulsed laser deposition with nitrogen radical beam
Author :
Obata, K. ; Sugioka, K. ; Toyoda, K. ; Takai, H. ; Midorikawa, K.
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
It is shown that a combination of PLD and nitrogen radical beams can grow high quality TiN films on a Si substrate without silicidation at the interface. Analysis using X-ray photoelectron spectroscopy (XPS) revealed that this method achieves synthesis of stoichiometric TiN films.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; free radicals; pulsed laser deposition; stoichiometry; titanium compounds; N radical beam; Si; Si[100]; TiN; TiN growth; X-ray photoelectron spectroscopy; pulsed laser deposition; stoichiometric TiN films; Chemical industry; Laser beams; Nitrogen; Optical pulses; Pulsed laser deposition; Substrates; Telephony; Tin; Titanium; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811636
