• DocumentCode
    348489
  • Title

    TiN growth on Si[100] by hybrid pulsed laser deposition with nitrogen radical beam

  • Author

    Obata, K. ; Sugioka, K. ; Toyoda, K. ; Takai, H. ; Midorikawa, K.

  • Author_Institution
    RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    Aug. 30 1999-Sept. 3 1999
  • Firstpage
    86
  • Abstract
    It is shown that a combination of PLD and nitrogen radical beams can grow high quality TiN films on a Si substrate without silicidation at the interface. Analysis using X-ray photoelectron spectroscopy (XPS) revealed that this method achieves synthesis of stoichiometric TiN films.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; free radicals; pulsed laser deposition; stoichiometry; titanium compounds; N radical beam; Si; Si[100]; TiN; TiN growth; X-ray photoelectron spectroscopy; pulsed laser deposition; stoichiometric TiN films; Chemical industry; Laser beams; Nitrogen; Optical pulses; Pulsed laser deposition; Substrates; Telephony; Tin; Titanium; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
  • Conference_Location
    Seoul, South Korea
  • Print_ISBN
    0-7803-5661-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.1999.811636
  • Filename
    811636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348489