Design of a Low-Power Bandgap Current Reference

Author

Ru Bei

Author_Institution

Inst. of Comput. & Inf. Eng., Xinxiang Univ., Xinxiang, China

fYear

2010

fDate

7-9 Nov. 2010

Firstpage

1

Lastpage

3

Abstract

A low-power complementary metal oxide semiconductor (CMOS) bandgap current reference is proposed under the 1.8V supply voltage. The temperature compensation current generator was used in order to obtain an accurate 5μA current with lower temperature coefficient. Sub-threshold technology and advanced startup circuit were adopted to decrease the circuit power consumption. The current reference has been simulated based on SMIC 0.18μm CMOS technology. The simulation results show that it has significantly low power and low sensitivity to the temperature. The power consumption is only 35.22μW. The temperature coefficient is 42.62ppm/°C under typical process with the temperature range from -40°C to 125°C.

Keywords

CMOS integrated circuits; compensation; energy gap; low-power electronics; reference circuits; sensitivity analysis; SMIC CMOS technology; circuit power consumption; complementary metal oxide semiconductor; low-power CMOS bandgap current reference design; power 35.22 muW; size 0.18 mum; startup circuit; subthreshold technology; temperature -40 degC to 125 degC; temperature coefficient; temperature compensation current generator; voltage 1.8 V; CMOS integrated circuits; Equations; MOSFETs; Photonic band gap; Power demand; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

E-Product E-Service and E-Entertainment (ICEEE), 2010 International Conference on

Conference_Location

Henan

Print_ISBN

978-1-4244-7159-1

Type

conf

DOI

10.1109/ICEEE.2010.5661273

Filename

5661273