Title :
Compressively-strained InGaAsP-active (λ=0.78-0.85 μm) regions for VCSELs
Author :
Tansu, N. ; Zhou, D. ; Rusli, S. ; Mawst, L.J.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Abstract :
Compressively-strained (CS) InGaAsP (λ=0.78-0.85 μm) QW-active regions are evaluated from broad-area edge-emitting diode lasers. High T0, T1 values make them useful for high-temperature/high-power applications. Preliminary results are reported on proton-implanted AlGaAs/AlAs-DBR VCSELs with (CS) InGaAsP/InGaP active regions emitting at λ=0.78 μm
Keywords :
III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; waveguide lasers; 0.78 to 0.85 mum; AlGaAs-AlAs; AlGaAs/AlAs-DBR laser; InGaAsP; InGaAsP-InGaP; InGaAsP/InGaP active regions; VCSELs; broad-area edge-emitting diode lasers; compressively-strained InGaAsP-active regions; compressively-strained active regions; high-power applications; high-temperature applications; proton-implantation; quantum well-active regions; Chemical lasers; Diode lasers; Distributed Bragg reflectors; Electrons; Gallium arsenide; Photonic band gap; Quantum well lasers; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811766
