Title :
Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon
Author :
Krishnamoorthy, V. ; Beaudet, B. ; Jones, K.S. ; Venables, D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Si wafers were implanted with As at energies ranging from 10-50 keV to a constant dose of 5e15/cm2 and annealed at 700C for various times to study transient-enhanced-diffusion of arsenic and its correlation to the defect microstructure. The results showed that the diffusion enhancement was maximum after a 30 keV implant and anneal. The defect microstructure consisted of only end of range damage in the 10 and 20 keV specimens while the 30, 40 and 50 keV implanted/annealed specimens contained both end of range and projected range defects. An explanation for these observations is suggested, after taking into account a combination of factors that include arsenic precipitation, arsenic clustering and point defect annihilation at the surface
Keywords :
annealing; arsenic; diffusion; elemental semiconductors; ion implantation; precipitation; silicon; 10 to 50 keV; 700 C; Si:As; annealing; clustering; defect microstructure; end of range damage; low energy high dose arsenic ion implantation; point defect annihilation; precipitation; projected range defect; silicon wafer; transient enhanced diffusion; Amorphous materials; Annealing; Atomic measurements; Implants; Mass spectroscopy; Materials science and technology; Microstructure; Power engineering and energy; Silicon; Temperature;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586484
