Title :
The carrier dynamical issues for extending the operating wavelength of quantum cascade lasers into the Terahertz regime
Author :
Harrison, P. ; Donovan, K. ; Kelsall, R.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
The potential operating performance of Terahertz quantum cascade lasers are compared with contemporary shorter wavelength mid-infrared devices from the viewpoint of the carrier dynamics within the active region. It has been shown that the internal quantum efficiency for radiative transitions between two subbands in GaAs at Terahertz frequencies is greater at low temperatures than that at mid-infrared wavelengths. It is comparable at 77 K and less at room temperature. Furthermore the internal quantum efficiency is higher for vertical intrawell transitions than diagonal interwell transitions at Terahertz frequencies
Keywords :
III-V semiconductors; electron density; electron-phonon interactions; gallium arsenide; quantum well lasers; submillimetre wave lasers; 293 to 298 K; 77 K; GaAs; Terahertz regime; active region; carrier dynamical issues; diagonal interwell transitions; internal quantum efficiency; low temperatures; mid-infrared wavelengths; operating wavelength; quantum cascade lasers; radiative transitions; room temperature; subbands; vertical intrawell transitions; Electron emission; Laser transitions; Optical scattering; Particle scattering; Phonons; Pump lasers; Quantum cascade lasers; Quantum well lasers; Stimulated emission; Temperature;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811859